EM3591-RTR datasheet(15/59 Pages) SILABS

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EM359x

Rev 1.0

Reset Current

Quiescent current, nRESET

asserted

Typ at 25 °C/3.0 V

Max at 85 °C/3.6 V

—

Processor and Peripheral Currents

ARM® CortexTM-M3, RAM, and

flash memory

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 running at 12 MHz

from crystal oscillator

Radio and all peripherals off

—

7.5

—

ARM® CortexTM-M3, RAM, and

flash memory

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 running at 24 MHz

from crystal oscillator

Radio and all peripherals off

—

8.5

—

ARM® CortexTM-M3, RAM, and

flash memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 sleeping, CPU

clock set to 12 MHz from the crystal

oscillator

Radio and all peripherals off

—

4.0

—

ARM® CortexTM-M3, RAM, and

flash memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 sleeping, CPU

clock set to 6 MHz from the high fre-

quency RC oscillator

Radio and all peripherals off

—

2.5

—

Serial controller current

For each controller at maximum data

rate

—

0.2

—

General purpose timer current

For each timer at maximum clock rate

—

0.25

—

General purpose ADC current

At maximum sample rate, DMA enabled

—

1.1

—

USB active current

USB suspended mode current

1.8 V memory and 1.25 V core

ARM® CortexTM-M3 sleeping, CPU

clock set to 3 MHz from the high fre-

quency RC oscillator.

Radio and all peripherals off

2.5

RX Current

Radio receiver, MAC, and base-

band

ARM® CortexTM-M3 sleeping, CPU

clock set to 12 MHz

—

23.5

—

Total RX current ( = IRadio receiver,

MAC and baseband, CPU + IRAM,

and Flash memory )

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 12 MHz

—

25.5

—

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 24 MHz

—

27.0

—

Table 3.4. DC Characteristics (Continued)

Parameter

Test Condition

Min

Typ

Max

Unit

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