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R6986 数据表(PDF) 9 Page - STMicroelectronics |
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R6986 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 62 page ![]() DocID026996 Rev 2 9/62 R6986 Electrical characteristics 62 Power consumption ISHTDWN Shutdown current from VIN VSS/INH = GND 4 8 15 A IQ OPVIN Quiescent current from VIN LCM - SWO VREF < VFB < VOVP (SLEEP) VBIAS = 3.3 V (3) 410 15 A LCM - NO SWO VREF < VFB < VOVP (SLEEP) VBIAS = GND (3) 35 70 120 LNM - SWO VFB = GND (NO SLEEP) VBIAS = 3.3 V 0.5 1.5 5 mA LNM - NO SWO VFB = GND (NO SLEEP) VBIAS = GND 22.8 6 IQ OPVBIAS Quiescent current from VBIAS LCM - SWO VREF < VFB < VOVP (SLEEP) VBIAS = 3.3 V (3) 20 50 115 A LNM - SWO VFB = GND (NO SLEEP) VBIAS = 3.3 V 0.5 1.2 5 mA Soft-start VINH VSS threshold SS rising 200 460 700 mV VINH HYST VSS hysteresis 60 ISS CH CSS charging current VSS < VINH OR t < TSS SETUP OR VEA+ > VFB (2) 1 A t > TSS SETUP AND VEA+ < VFB (2) 4 VSS CLMP SS discharge voltage VCC < VCCH OR t < TSS SETUPOR thermal fail 855 900 945 mV VSS START Start of internal error amplifier ramp 0.995 1.1 1.15 0 V SSGAIN SS/INH to internal error amplifier gain 3 VSS END SS/INH voltage at the end of SS phase 2.5 3.6 V Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Note Min. Typ. Max. Unit |
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