STP35N60DM2 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STP35N60DM2

4/13

DocID028348 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 14 A

0.094

0.11

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input

capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2400

Coss

Output

capacitance

110

Crss

Reverse transfer

capacitance

2.8

Coss eq.

(1)

Equivalent

output

capacitance

VDS = 0 to 480 V, VGS = 0 V

190

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A

4.3

Total gate

charge

VDD = 480 V, ID = 28 A, VGS = 10 V (see

Figure 15: "Test circuit for gate charge

behavior")

Qgs

Gate-source

charge

14.6

Qgd

Gate-drain

charge

24.2

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

STP35N60DM2 数据表(PDF) 4 Page - STMicroelectronics

STP35N60DM2 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

STP35N60DM2 数据表(PDF) 4 Page - STMicroelectronics

STP35N60DM2 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载