This is information on a product in full production.

December 2015

DocID15795 Rev 5

1/13

STAP85025S

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Datasheet

Figure 1. Pin connection

Features

• Excellent thermal stability

• Common source configuration

13.6 V

• Plastic package

• ESD protection

• In compliance with the 2002/95/EC European

directive

Description

The STAP85025S is a common source N-

channel, enhancement-mode lateral field-effect

RF power transistor. It is designed for high gain,

broadband commercial and industrial

applications. It operates at 13.6 V in common

source mode at a frequency up to 1 GHz. The

STAP85025S boasts the excellent gain, linearity

and reliability of ST’s latest LDMOS technology

mounted in STAP® ST advanced PowerSO-10

RF package. The STAP85025S superior linearity

performance makes it an ideal solution for the car

mobile radio.

The STAP® ST plastic package has been

designed to offer high reliability and high power

capability. It has been specially optimized for RF

needs and offers excellent RF performance and

ease of assembly.

STAP1

Drain

Gate

Source

Table 1. Device summary

Order code

Marking

Package

Packing

STAP85025S

STAP85025S

STAP1

Tube

www.st.com