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STL66N3LLH5 数据表(PDF) 1 Page - STMicroelectronics |
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STL66N3LLH5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() January 2016 DocID022356 Rev 3 1/15 This is information on a product in full production. www.st.com STL66N3LLH5 Automotive-grade dual N- channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STL66N3LLH5 30 V 5.8 mΩ 80 A Designed for automotive applications and AEC-Q101 qualified Low on-resistance RDS(on) High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Switching applications Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1: Device summary Order code Marking Package Packing STL66N3LLH5 66N3LLH5 PowerFLAT™ 5x6 Tape and reel |
类似零件编号 - STL66N3LLH5 |
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类似说明 - STL66N3LLH5 |
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