STL66N3LLH5 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STL66N3LLH5

功能描述	Automotive-grade dual N-channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STL66N3LLH5

Electrical ratings

DocID022356 Rev 3

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±22

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

ID(2)

Drain current (continuous) at Tpcb = 25 °C

Drain current (continuous) at Tpcb = 100 °C

14.5

IDM(2)(3)

Drain current (pulsed)

PTOT(1)

Total dissipation at Tcase = 25 °C

PTOT(2)

Total dissipation at Tpcb = 25 °C

4.8

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

Notes:

(1) This value is rated according to Rthj-c

(2) This value is rated according to Rthj-pcb

(3) Pulse width is limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.08

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

31.3

Notes:

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAV

Avalanche current, not repetitive

10.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAV, VDD = 24 V)

180

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