STAC9200 datasheet(1/14 Pages) STMICROELECTRONICS

部件名	STAC9200

功能描述	200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 14 page

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

April 2014

DocID025416 Rev 2

1/14

STAC9200

200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package

Datasheet

- preliminary data

Figure 1. Pin connection

Features

• Improved ruggedness: V(BR)DSS > 80 V

• Load mismatch 65:1 all phases @

200 W / 32 V / 860 MHz under 1 msec - 10%

• POUT = 200 W min. (250 W typ.) with 16 dB

gain @ 860 MHz

• In compliance with the 2002/95/EC European

directive

• ST air-cavity STAC® packaging technology

Description

The STAC9200 is a common source N-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband applications in

the HF to 1300 MHz frequency range. The

STAC9200 benefits from the latest generation of

efficient STAC® package technology.

1

2

3

1. Drain

3. Gate

2. Source (bottom side)

STAC244B

Air cavity

Table 1. Device summary

Order code

Marking

Package

Packaging

STAC9200

STAC9200(1)

STAC244B

Plastic tray

1.

For more details please refer to Chapter 8: Marking, packing and shipping specifications.

www.st.com

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