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STL7DN6LF3 数据表(PDF) 3 Page - STMicroelectronics |
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STL7DN6LF3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() DocID023010 Rev 4 3/18 STL7DN6LF3 Electrical ratings 18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID (1),(2) 1. Specified by design. Not subject to production test. 2. Current is limited by bonding, with an RthJC = 2.9 °C/W the chip is able to carry 22 A at 25 °C. Drain current (continuous) at TC = 25 °C 20 A ID (1) Drain current (continuous) at TC = 100 °C 16 A ID (4) Drain current (continuous) at Tpcb = 25 °C 6.5 A ID (4) Drain current (continuous) at Tpcb=100 °C 4.6 A IDM (3),(4) 3. Pulse width limited by safe operating area 4. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Drain current (pulsed) 26 A PTOT Total dissipation at TC = 25°C 52 W PTOT (4) Total dissipation at Tpcb = 25°C 4.3 W IAV Not-repetitive avalanche current 6.5 A EAS (5) 5. Starting TJ= 25 °C, ID= 8 A, VDD= 25 V Single pulse avalanche energy 190 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.9 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 35 °C/W |
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