STL7DN6LF3 datasheet(4/18 Pages) STMICROELECTRONICS

部件名	STL7DN6LF3

功能描述	Automotive-grade dual N-channel 60 V, 35 mΩ typ., 6.5 A STripFET™ F3 Power MOSFET in PowerFLAT™ 5x6 double island

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 18 page

Electrical characteristics

STL7DN6LF3

4/18

DocID023010 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 60 V

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 3 A

VGS= 5 V, ID= 3 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =25 V, f=1 MHz,

VGS=0

-432

Coss

Output capacitance

Crss

Reverse transfer

capacitance

10.5

Total gate charge

VDD=30 V, ID = 6.5 A

VGS =10 V, Figure 13

-8.7

Qgs

Gate-source charge

1.9

Qgd

Gate-drain charge

1.9

Intrinsic gate resistance

f=1 MHz open drain

6.3

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=30 V, ID= 3 A,

RG=4.7 Ω, VGS=10 V

Figure 12

-6.7

Rise time

10.4

td(off)

Turn-off delay time

32.4

Fall time

5.4

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