This is information on a product in full production.

July 2015

DocID023247 Rev 6

1/14

STPSC6H065

650 V power Schottky silicon carbide diode

Datasheet

Features

• No reverse recovery charge in application

current range

• Switching behavior independent of

temperature

• Dedicated to PFC applications

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V rms

– Typical package capacitance: 7 pF

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1. Device summary

Symbol

Value

6 A

650 V

175 °C

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