STPSC6H065DI datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Characteristics

STPSC6H065

4/14

DocID023247 Rev 6

Figure 5. Peak forward current versus case

temperature (TO-220AC Ins)

Figure 6. Junction capacitance versus reverse

voltage applied (typical values)

I M (A)

100

125

150

175

d = 0.1

d = 0.3

d = 0.5

d = 1

d = 0.7

TC(°C)

d=tp/T

100

150

200

250

300

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

OSC=30 mVRMS

j=25 °C

VR(V)

Cj (pF)

Figure 7. Relative variation of thermal

impedance junction to case versus pulse

duration (TO-220AC, DPAK and D²PAK)

Figure 8. Relative variation of thermal

impedance junction to case versus pulse

duration (TO-220AC Ins)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

tp(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

th(j-c)/Rth(j-c)

tp(s)

Figure 9. Non-repetitive peak surge forward

current versus pulse duration (sinusoidal

waveform)

Figure 10. Total capacitive charges versus

reverse voltage applied (typical values)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

IFSM(A)

a=25 °C

a=125 °C

tp(s)

100

150

200

250

300

350

400

cj(nC)

VR (V)

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