STS10P3LLH6 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STS10P3LLH6

4/12

DocID025837 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = -250 µA

-30

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = -30 V

-1

µA

VDS = -30 V, TC = 125 °C

-10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20 V

-100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

RDS(on)

Static drain-source on-

resistance

VGS = -10 V, ID = -5 A

0.01

0.012

Ω

VGS = -4.5 V, ID = -5 A

0.014

0.017

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz, VGS

= 0 V

3350

Coss

Output capacitance

414

Crss

Reverse transfer

capacitance

287

Total gate charge

VDD = -15 V ID = -10 A

VGS = -4.5 V

(see Figure 14: "Gate

charge test circuit" )

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -15 V, ID = -5 A

= 4.7 Ω, VGS = -10 V

(see Figure 13: "Switching

times test circuit for resistive

load" )

12.8

Rise time

112

td(off)

Turn-off delay time

Fall time

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on voltage

ISD = -5 A, VGS = 0

-1.1

trr

Reverse recovery time

ISD = -5 A, di/dt = 100 A/µs

VDD = -24 V, Tj = 150 °C

(see Figure 15: "Source-

drain diode forward

characteristics")

25.2

Qrr

Reverse recovery charge

17.4

IRRM

Reverse recovery current

-1.4

Notes:

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

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