June 2015

DocID025837 Rev 3

1/12

This is information on a product in full production.

www.st.com

STS10P3LLH6

P-channel -

30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6

Power MOSFET in an SO-8 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STS10P3LLH6

-30 V

0.012 Ω

-12.5 A

•

Very low on-resistance

•

Very low gate charge

•

High avalanche ruggedness

•

Low gate drive power loss

Applications

•

Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

packages.

Table 1: Device summary

Order code

Marking

Packages

Packing

STS10P3LLH6

10K3L

SO-8

Tape and reel

SO - 8

1

4