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STTH60SW03CW 数据表(PDF) 2 Page - STMicroelectronics |
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STTH60SW03CW 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH60SW03C 2/9 DocID026582 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: Tj(diode1) = P (diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.012 IF2(RMS) Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 45 A IF(AV) Average forward current, δ = 0.5 square waveform TC = 85 °C Per diode 30 A TC = 75 °C Per device 60 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature 175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 1.8 °C/W Total 1 Rth(c) Coupling 0.2 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 15 µA Tj = 125 °C 15 150 VF(2) Forward voltage drop Tj = 25 °C IF = 30 A 1.55 V Tj = 150 °C 1.05 1.25 Tj = 25 °C IF = 60 A 1.85 Tj = 150 °C 1.35 1.6 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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