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STTH60SW03CW 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH60SW03CW
功能描述  Turbo 2 ultrafast high voltage rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH60SW03CW 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH60SW03C
4/9
DocID026582 Rev 1
Figure 5. Peak reverse recovery current versus
dIF/dt (typical values, per diode)
Figure 6. Reverse recovery time versus dIF/dt
(typical values, per diode)
I(A)
RM
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
I
F = IF(AV)
V
R = 200 V
T
j = 125 °C
dIF/dt(A/µs)
t
(ns)
RR
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
dIF/dt(A/µs)
I
F = IF(AV)
V
R = 200 V
T
j = 125 °C
Figure 7. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Figure 8. Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
Q
(ns)
RR
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
400
450
500
dIF/dt(A/µs)
I
F = IF(AV)
V
R = 200 V
T
j = 125 °C
Sfactor
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
50
100
150
200
250
300
350
400
450
500
dIF/dt(A/µs)
I
F = IF(AV)
V
R = 200 V
T
j = 125 °C
Figure 9. Relative variations of dynamic
parameters versus junction temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values, per diode)
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
I
F = IF(AV)
V
R = 200 V
Reference: T
j = 125
°C
I
RM
S
FACTOR
Q
RR
T (°C)
j
0
1
2
3
4
5
200
250
300
350
400
450
500
I
F=IF(AV)
T
j=125 °C
V
(V)
FP
dIF/dt(A/µs)



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