SPT02-236DDB datasheet(3/12 Pages) STMICROELECTRONICS

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SPT02-236DDB

Characteristics

Table 1. Pinout connections(1)

See Figure 1

Symbol

Description

D1 power bus protection diode cathode and D2 reverse blocking protection cathode

D1 power bus protection diode anode

D2 reverse blocking protection anode

Table 2. Absolute ratings (Tamb = 25 °C)

Symbol

Diode

Parameter

Value

Unit

VPP

All

ESD protection, IEC 61000-4-2, per diode, in air (1)

See system oriented test circuits in Figure 5 (ESD) and Figure 4 (Surge as also described in

IEC 60947-5-2).

ESD protection, IEC 61000-4-2, per diode, in contact (1)

VPP

All

Peak Surge Voltage, IEC 61000-4-5, per diode,

RCC = 500 Ω,

(1)

1kV

PPP

All

Peak pulse current, TJ = Tamb = 85 °C,

tP = 8/20 µs

1400

IPP

All

Peak pulse power dissipation, TJ = Tamb = 85 °C,

tP = 8/20 µs

IFSM

All

Maximum forward surge current, tP = 10 ms square

EAR

Maximum repetitive avalanche energy

L= 1 H, IRAS= 0.3A, RS = 100 Ω, VCC = 30 V,

Tamb = 85 °C,

(1)

All

Storage junction temperature range

- 40 to 150

°C

Table 3. Recommended operating conditions

Symbol

Parameter

Value

Unit

VCC

Operating power bus supply voltage

-30 to 35

Pulse repetitive voltage tP = 0.5 s, RCC = 500 Ω

-30 to 37

D2 forward peak current Tj = 150 °C duty cycle = 50%

300

Tamb

Operating ambient temperature range

-40 to 100

°C

Operating junction temperature range(1)

Extended from DC operating at 150 °C up to peak repetitive value during the inductive load

demagnetization

-40 to 150

°C

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