SPT02-236DDB datasheet(4/12 Pages) STMICROELECTRONICS

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Characteristics

SPT02-236DDB

4/12

DocID024333 Rev2

Table 4. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-a)

SMD thermal resistance junction to ambient, per diode

FR4 board, copper thickness = 35 µm, recommended footprint

230

°C/W

Zth(j-a)

SMD thermal transient impedance junction to ambient, per diode

tp = 15 ms, Tamb = 85 °C, recommended footprint

6.5

°C/W

Table 5. Electrical characteristics (TJ = 25 °C, unless otherwise specified)

Symbol

Diode

Name

Test conditions

Value

Unit

VRM

ALL

Reverse stand off voltage

IR = 200 nA

MIN

IR = 1 µA

MIN

IRM

ALL

Leakage reverse current

VRM = 36 V

(1)

Voltage applied at the nodes of each diode

MAX

µA

VRM = 36 V,

TJ = 150 °C

MAX

µA

VBR

ALL

Reverse breakdown voltage

IR = 1 mA

MIN

TYP

41.4

VCL

ALL

Peak clamping voltage

IPP = 2 A,

tP = 8 /20 µs

MAX

TYP

ALL

8/20µs dynamic resistance

TYP

0.5

αTALL

VBR Temperature sensitivity

(2)

VBR @ TJ = VBR @25 °C x (1+ αT x (TJ - 25))

MAX

10-4 /°C

VCL

Peak clamping voltage

IR = 0.3 A, L = 1 H,

VCC = 30 V

MAX

Forward drop voltage

IF = 300 mA

MAX

1.1

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