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STBP110 数据表(PDF) 27 Page - STMicroelectronics |
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STBP110 数据表(HTML) 27 Page - STMicroelectronics |
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27 / 40 page ![]() STBP110 Maximum rating Doc ID 018687 Rev 3 27/40 6 Maximum rating Stressing the device above the rating listed in Table 2 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in Section 3 of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics™ SURE Program and other relevant documentation. Table 2. Absolute maximum ratings Symbol Parameter Value Unit TSTG Storage temperature (VIN off) -55 to 150 °C TSLD (1) 1. Reflow at peak temperature of 260 °C. The time above 255 °C must not exceed 30 seconds. Lead solder temperature for 10 seconds 260 °C TJ Operating junction temperature range (internally limited to Toff) -40 to 150 °C VIN IN pin input voltage -0.3 to 30 V VOUT OUT pin input/output voltage -0.3 to 12 V VIO Input/output voltage (other pins) -0.3 to 7 V ILOAD Load current (IN to OUT) 1200 mA IREVERSE Reverse diode current (OUT to IN) 500 mA ISINK(FLT) FLT pin sink current 15 mA VESD ESD withstand voltage (IEC 61000-4-2, IN pin only)(2) 2. System-level value (see typical application circuit, C1 ≥ 1 µF low ESR ceramic capacitor). ±15 (air), ±8 (contact) kV Human body model (HBM), model = 2(3) 3. Human body model, 100 pF discharged through a 1.5 k Ω resistor according to the JESD22/A114 specification. 2000 V Machine model (MM), model = B(4) 4. Machine model, 200 pF discharged through all pins according to the JESD22/A115 specification. 200 V Table 3. Thermal data Symbol Parameter Value Unit RthJA Thermal resistance (junction-to-ambient) 59(1) 1. The package was mounted on a 4-layer JEDEC test board with 2 thermal vias connecting from the thermal land to the first buried plane. The 4-layer PCB (2S2P) was constructed based on JESD 51-7 specifications and vias based on JESD 51-5. °C/W RthJC Thermal resistance (junction-to-case) 5.9 °C/W |
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