STBP110 datasheet(29/40 Pages) STMICROELECTRONICS

29 / 40 page

STBP110

DC and AC parameters

Doc ID 018687 Rev 3

29/40

VIH(EN)

EN high level input voltage

1.2

RPD(EN)

EN internal pull-down

resistor(3)

VIN > 2.5 V, V(EN) = 5 V

100

250

400

Timing parameters

ton

Startup delay(4)

Time measured from VIN > VUVLO to

VOUT = 0.3 V (no load on the output).

8ms

toff

(5)

Output turn-off time

Time measured from VIN > VOVLO to

VOUT ≤ 0.3 V. VIN increasing from

5.0 V to 8.0 V at 3.0 V/µs, RLOAD = 5 Ω,

CLOAD = 0.

µs

tdis

(5)

Disable time

Time measured from V(EN) ≥ 1.2 V to

VOUT < 0.3 V, RLOAD = 5 Ω, CLOAD = 0.

trec

Recovery delay from UVLO,

OVLO, or thermal shutdown(4)

Time measured to VOUT = 0.3 V

(no load on the output)

8ms

Thermal shutdown

Toff

Thermal shutdown threshold

temperature

140

150

°C

THYS(off)

Thermal shutdown hysteresis

°C

Test conditions described in Table 4 (except where noted).

Hysteresis of 60 mV typ. available upon request.

Version without pull-down resistor or with permanently connected pull-down resistor available upon request.

Delays of 16, 32, and 64 ms available upon request.

Guaranteed by design. Not tested in production.

Table 5.

DC and AC characteristics (continued)

Symbol

Description

Test condition(1)

Min.

Typ.

Max.

Unit

STBP110 数据表(PDF) 29 Page - STMicroelectronics

STBP110 数据表(HTML) 29 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

数据表下载