STF35N60DM2

Electrical ratings

DocID028365 Rev 1

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID

(1)

28

A

17

IDM

(2)

Drain current (pulsed)

112

A

40

W

dv/dt

(3)

Peak diode recovery voltage slope

50

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Insulation withstand voltage (RMS) from all three leads to external heat

2.5

kV

Storage temperature

-55 to

150

°C

Operating junction temperature

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

(4)

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

3.1

°C/W

Thermal resistance junction-amb

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

6

A

EAS

(1)

Single pulse avalanche energy

650

mJ

Notes:

(1)