STGB10M65DF2 datasheet(4/20 Pages) STMICROELECTRONICS

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Electrical characteristics

STGB10M65DF2

4/20

DocID027429 Rev 5

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 10 A

1.55

2.0

VGE = 15 V, IC = 10 A,

TJ = 125 °C

1.9

VGE = 15 V, IC = 10 A,

TJ = 175 °C

2.1

Forward on-voltage

IF = 10 A

1.5

IF = 10 A, TJ = 125 °C

1.3

IF = 10 A, TJ = 175 °C

1.2

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ± 20 V

250

µA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

840

Coes

Output

capacitance

Cres

Reverse transfer

capacitance

Total gate charge

VCC = 520 V, IC = 10 A, VGE = 15 V

(see Figure 30: " Gate charge test

circuit")

Qge

Gate-emitter

charge

Qgc

Gate-collector

charge

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 10 A, VGE = 15 V,

RG = 22

Ω (see Figure 29: " Test circuit for

inductive load switching" )

Current rise

time

7.4

(di/dt)on

Turn-on

current slope

1086

A/µs

td(off)

Turn-off-delay

time

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