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STGB10M65DF2 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGB10M65DF2
功能描述  Trench gate field-stop IGBT, M series 650 V, 10 A low loss
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGB10M65DF2 数据表(HTML) 1 Page - STMicroelectronics

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October 2015
DocID027429 Rev 5
1/20
This is information on a product in full production.
www.st.com
STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGB10M65DF2
G10M65DF2
D²PAK
Tape and reel
1
3
TAB
D2PAK


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