October 2015

DocID028488 Rev 1

1/15

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STGF15M65DF2

Trench gate field-stop IGBT M series, 650 V 15 A low loss

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time





Tight parameter distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represents an optimum

compromise in performance to maximize the

efficiency of inverter systems where low loss and

short-circuit capability are essential. Furthermore,

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGF15M65DF2

G15M65DF2

TO-220FP

Tube

TO-220FP