STGF15M65DF2

Electrical characteristics

DocID028488 Rev 1

5/15

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Ω

(see Figure 29: " Test circuit

for inductive load switching" )

24

-

ns

Current rise time

7.8

-

ns

Turn-on current slope

1570

-

A/µs

Turn-off-delay time

93

-

ns

Current fall time

106

-

ns

Eon(1)

Turn-on switching losses

0.09

-

mJ

Turn-off switching losses

0.45

-

mJ

Total switching losses

0.54

-

mJ

Turn-on delay time

Ω

Test circuit for inductive load

switching" )

24.8

-

ns

Current rise time

9.2

-

ns

Turn-on current slope

1300

-

A/µs

Turn-off-delay time

96

-

ns

Current fall time

169

-

ns

Turn-on switching losses

0.22

-

mJ

Turn-off switching losses

0.61

-

mJ

Total switching losses

0.83

-

mJ

Short-circuit withstand time

6

-

µs

Notes:

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse recovery time

Test circuit for inductive load

switching") di/dt = 1000 A/µs

-

142

-

ns

Reverse recovery charge

-

525

-

nC

Reverse recovery current

-

13.4

-

A

Peak rate of fall of reverse

-

790

-

A/µs

Reverse recovery energy

-

64

-

µJ

Reverse recovery time

(see Figure 29: " Test circuit

for inductive load switching")

di/dt = 1000 A/µs

-

241

-

ns

Reverse recovery charge

-

1690

-

nC

Reverse recovery current

-

20

-

A

Peak rate of fall of reverse

-

420

-

A/µs

Reverse recovery energy

-

176

-

µJ