STGP10M65DF2 datasheet(3/18 Pages) STMICROELECTRONICS

部件名	STGP10M65DF2

功能描述	Trench gate field-stop IGBT, M series 650 V, 10 A low loss

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STGP10M65DF2

Electrical ratings

DocID027352 Rev 4

3/18

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

VGE

Gate-emitter voltage

± 20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

PTOT

Total dissipation at TC = 25 °C

115

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

Notes:

(1)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

1.3

°C/W

RthJC

Thermal resistance junction-case diode

2.08

RthJA

Thermal resistance junction-ambient

62.5

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