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STGP10M65DF2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGP10M65DF2
功能描述  Trench gate field-stop IGBT, M series 650 V, 10 A low loss
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10M65DF2 数据表(HTML) 5 Page - STMicroelectronics

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STGP10M65DF2
Electrical characteristics
DocID027352 Rev 4
5/18
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
tf
Current fall
time
-
92
-
ns
Eon(1)
Turn-on
switching
losses
-
0.12
-
mJ
Eoff(2)
Turn-off
switching
losses
-
0.27
-
mJ
Ets
Total switching
losses
-
0.39
-
mJ
td(on)
Turn-on delay
time
VCE = 400 V, IC = 10 A, VGE = 15 V,
RG = 22
Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
-
18
-
ns
tr
Current rise
time
-
9
-
ns
(di/dt)on
Turn-on
current slope
-
890
-
A/µs
td(off)
Turn-off-delay
time
-
90
-
ns
tf
Current fall
time
-
170
-
ns
Eon
Turn-on
switching
losses
-
0.26
-
mJ
Eoff
Turn-off
switching
losses
-
0.4
-
mJ
Ets
Total switching
losses
-
0.66
-
mJ
tsc
Short-circuit
withstand time
VCC
≤ 400 V, VGE = 15 V, TJstart = 150 °C
6
-
µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
IF = 10 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
-
96
ns
Qrr
Reverse recovery
charge
-
373
nC
Irrm
Reverse recovery
current
-
13
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
661
A/µs



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