December 2015

DocID027768 Rev 3

1/19

This is information on a product in full production.

www.st.com

STGW30M65DF2,

STGWA30M65DF2

Trench gate field-stop IGBT, M series 650 V, 30 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of minimum short-circuit withstand time





Tight parameters distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description plur

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the M series

of IGBTs, which represent an optimum

compromise in performance to maximize the

efficiency of inverter systems where low-loss and

short-circuit capability are essential. Furthermore,

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGW30M65DF2

G30M65DF2

TO-247

Tube

STGWA30M65DF2

G30M65DF2

TO-247 long leads

Tube