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STGW30M65DF2 数据表(PDF) 5 Page - STMicroelectronics |
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STGW30M65DF2 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 19 page ![]() STGW30M65DF2, STGWA30M65DF2 Electrical characteristics DocID027768 Rev 3 5/19 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 29: " Test circuit for inductive load switching" ) 31.6 - ns tr Current rise time 13.4 - ns (di/dt)on Turn-on current slope 1791 - A/µs td(off) Turn-off-delay time 115 - ns tf Current fall time 110 - ns Eon (1) Turn-on switching losses 0.3 - mJ Eoff (2) Turn-off switching losses 0.96 - mJ Ets Total switching losses 1.26 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 30 - ns tr Current rise time 17 - ns (di/dt)on Turn-on current slope 1435 - A/µs td(off) Turn-off-delay time 116 - ns tf Current fall time 194 - ns Eon Turn-on switching losses 0.67 - mJ Eoff Turn-off switching losses 1.36 - mJ Ets Total switching losses 2.03 - mJ tsc Short-circuit withstand time VCC = 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs VCC = 400 V, VGE = 15 V, TJstart = 150 °C 6 - Notes: (1) Energy losses include reverse recovery of the diode. (2) Turn-off losses also include the tail of the collector current. |
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