STL3N10F7 datasheet(7/13 Pages) STMICROELECTRONICS

部件名	STL3N10F7

功能描述	N-channel enhancement mode

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 13 page

DocID025948 Rev 2

7/13

STL3N10F7

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Normalized V(BR)DSS vs temperature

Figure 10. Normalized gate threshold voltage vs

temperature

Figure 11. Normalized on-resistance vs

temperature

Figure 12. Source-drain diode forward

characteristics

400

300

200

100

VDS(V)

(pF)

500

Ciss

Coss

Crss

GIPG200120141330FSR

V(BR)DSS

1.0

0.98

0.96

-75

TJ(°C)

(norm)

-25

125

1.02

1.04

ID= 250µA

GIPG210120141040FSR

VGS(th)

0.8

0.7

0.6

-75

TJ(°C)

(norm)

-25

1.1

125

0.9

ID= 250µA

GIPG210120141021FSR

RDS(on)

1.3

0.9

0.5

-75

TJ(°C)

(norm)

-25

125

1.7

VGS= 10 V

GIPG210120141030FSR

VSD

0.5

1.5

ISD(A)

(V)

2.5

0.4

0.6

0.8

TJ=-55°C

TJ=175°C

TJ=25°C

1.0

1.2

GIPG210120141051FSR

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