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STL3N10F7 数据表(PDF) 4 Page - STMicroelectronics

部件名 STL3N10F7
功能描述  N-channel enhancement mode
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL3N10F7 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL3N10F7
4/13
DocID025948 Rev 2
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage, V
GS
= 0
I
D
= 250 μA
100
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V
1
μA
V
DS
= 100 V, T
C
= 125 °C
100
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
2.5
4.5
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 2 A
0.062
0.07
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
-408
-
pF
C
oss
Output capacitance
-
112
-
pF
C
rss
Reverse transfer
capacitance
-10
-
pF
Q
g
Total gate charge
V
DD
=50 V, I
D
= 4 A
V
GS
=10 V
(see Figure 14)
-7.8
-
nC
Q
gs
Gate-source charge
-
3
-
nC
Q
gd
Gate-drain charge
-
1.7
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
=50 V, I
D
= 2 A,
R
G
=4.7
Ω, V
GS
= 10 V
(see Figure 13)
-6.3
-
ns
t
r
Rise time
-
3
-
ns
t
d(off)
Turn-off delay time
-
11
-
ns
t
f
Fall time
-
4
-
ns



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