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STW65N65DM2AG 数据表(PDF) 1 Page - STMicroelectronics

部件名 STW65N65DM2AG
功能描述  Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW65N65DM2AG 数据表(HTML) 1 Page - STMicroelectronics

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August 2015
DocID028164 Rev 1
1/12
This is information on a product in full production.
www.st.com
STW65N65DM2AG
Automotive-grade N-
channel 650 V, 0.042 Ω typ., 60 A
Power MOSFET MDmesh™ DM2 in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STW65N65DM2AG
650 V
0.05 Ω
60 A
446 W
•
Designed for automotive applications and
AEC-Q101 qualified
•
Fast-recovery body diode
•
Extremely low gate charge and input
capacitance
•
Low on-resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW65N65DM2AG
65N65DM2
TO-247
Tube
TO-247
1
2
3


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