STW65N65DM2AG datasheet(5/12 Pages) STMICROELECTRONICS

部件名	STW65N65DM2AG

功能描述	Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 12 page

STW65N65DM2AG

Electrical characteristics

DocID028164 Rev 1

5/12

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

240

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 60 A

1.6

trr

Reverse recovery time

ISD = 60 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "Test

circuit for inductive load

switching and diode recovery

times")

154

Qrr

Reverse recovery

charge

0.94

µC

IRRM

Reverse recovery

current

12.2

trr

Reverse recovery time

ISD = 60 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

288

Qrr

Reverse recovery

charge

3.65

µC

IRRM

Reverse recovery

current

25.4

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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