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TD35 数据表(PDF) 6 Page - STMicroelectronics

部件名 TD35
功能描述  Advanced IGBT/MOSFET driver
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TD35 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
TD351
6/19
Doc ID 10977 Rev 2
4
Electrical characteristics
TA = -20 to 125°C, VH = 16 V, unless otherwise specified.
Table 5.
Electrical characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
Input
Vton
IN turn-on threshold voltage
0.8
1.0
V
Vtoff
IN turn-off threshold voltage
4.0
4.2
V
tonmin
Minimum pulse width
100
135
220
ns
Iinp
IN input current
IN input voltage < 4.5V
1
µA
Voltage reference (1)
Vref
Voltage reference
T = 25°C
4.85
5.00
5.15
V
Iref
Maximum output current
10
mA
Clamp
Vtclamp
CLAMP pin voltage threshold
2.0
V
VCL
Clamp low voltage
Icsink = 500mA
2.5
V
Delay
Vtdel
Voltage threshold
2.5
V
Rdel
Discharge resistor
I=1mA
500
Off Level
Iblvoff
LVOFF peak input current (sink)
LVOFF = 12V
90
200
µA
Violv
Offset voltage
LVOFF = 12V
-0.3
-0.15
0
V
Output
Isink
Output sink current
Vout = 6V
1000
1700
mA
Isrc
Output source current
Vout = VH-6V
750
1300
mA
VOL1
Output low voltage 1
Iosink = 20mA
0.35
V
VOL2
Output low voltage 2
Iosink = 500mA
2.5
V
VOH1
Output high voltage 1
Iosource = 20mA
VH-2.5
V
VOH2
Output high voltage 2
Iosource = 500mA
VH-4.0
V
tr
Rise time
CL = 1nF, 10% to 90%
100
ns
tf
Fall time (2)
CL = 1nF, 90% to 10%
100
ns
tdon
Turn on propagation delay
10% OUT change:
Rd = 4.7kΩ, no Cd
Rd = 10kΩ, Cd = 220 pF
1.8
2.0
600
2.2
ns
µs
tdoff
Turn off propagation delay (2)
10% OUT change
550
ns



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