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TD35 数据表(PDF) 9 Page - STMicroelectronics

部件名 TD35
功能描述  Advanced IGBT/MOSFET driver
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TD35 数据表(HTML) 9 Page - STMicroelectronics

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TD351
Functional description
Doc ID 10977 Rev 2
9/19
Ta is approximately given by (see Figure 5):
The turn-off delay (Ta) is also used to delay the input signal to prevent distortion of input
pulse width.
The two-level turn-off sequence can be disabled by connecting the LVOFF pin to VH and
connecting the CD pin to VREF with a 4.7 k
Ω resistor.
5.5
Minimum input ON-time
Input signals with ON-time smaller than Ta are ignored.
ON-time signals larger than Ta+2
.R
del
.C
d (Rdel is the internal discharge switch resistance,
Cd is the external timing capacitor) are transmitted to the output stage after the Ta delay, with
minimum width distortion (
∆Tw=Twout-Twin).
For ON-time input signals close to Ta (between Ta and Ta+2
.R
del
.C
d), the two-level duration
is slightly reduced and the total output width can be smaller than the input width (see
Figure 7).
5.6
Output stage
The output stage is able to sink/source 1.7 A/1.3 A (typical) at 25 °C and 1.0 A/0.75 A min.
over the full temperature range. This current capability is specified near the usual IGBT
Miller plateau.
5.7
Undervoltage protection
Undervoltage detection protects the application in the event of a low VH supply voltage
(during startup or a fault situation). During undervoltage, the OUT pin is driven low (active
pull-down for VH>2V, and passive pull-down for VH<2V).
T
a µs
()
0.7
R
d kΩ
() C
d nF
()
⋅⋅
=



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