ACE2607B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.3

2

Ordering information

ACE2607B XX + H

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

On/Off characteristics

Drain-Source Breakdown Voltage

-30

-34

V

Zero Gate Voltage Drain Current

-3

-200

nA

Gate Leakage Current

±1.5

±50

nA

On characteristics

b

Static Drain-Source On-Resistance

52

65

m

Ω

68

85

Gate Threshold Voltage

-1

-1.3

-3

V

Forward Transconductance

12

S

Switching characteristics

b

Turn-On Delay Time

8.6

ns

Turn-Off Delay Time

28.2

Dynamic characteristics

Input Capacitance

f=1.0MHz

550

pF

Output Capacitance

60

Reverse Transfer Capacitance

50

Drain-source diode characteristics and maximum ratings

b

Drain-Source Diode Forward

Voltage

(2)

-0.81

V

Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment

with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is

based on the DC thermal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

GM : SOT-23-6L

Pb - free

Halogen - free