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ACE2607B 数据表(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2607B 数据表(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 5 page  ACE2607B P-Channel Enhancement Mode Field Effect Transistor VER 1.3 1 Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features V DS(V)=-30V, ID=-3.5A R DS(ON)=52mΩ@VGS=-10V R DS(ON)=68mΩ@VGS=-4.5V High density cell design for low R DS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ ID -3.5 A Pulse (Note 2) -20 Power Dissipation (1) (Note 1) PD 650 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L 1 |
类似零件编号 - ACE2607B |
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类似说明 - ACE2607B |
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