ACE7331M datasheet(3/7 Pages) ACE

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ACE7331M

P-Channel 30-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 uA

-1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±25 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -24 V, VGS = 0 V

-1

VDS = -24 V, VGS = 0 V, TJ = 55°C

-5

On-State Drain Current

ID(on)

VDS = -5 V, VGS = -10 V

-50

Drain-Source On-Resistance

RDS(ON)

VGS = -10 V, ID = -11.5 A

mΩ

VGS = -4.5 V, ID =-9.3 A

Forward Transconductance

gFS

VDS =-15 V, ID = -11.5 A

Diode Forward Voltage

VSD

IS = 2.5 A, VGS = 0 V

-0.8

Dynamic

Total Gate Charge

VDS = -15 V, VGS = -5 V, ID =- 11.5 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -15 V, RL = 6 Ω,

ID = -1 A, VGEN = -10 V

Rise Time

Turn-Off Delay Time

td(off)

100

Fall Time

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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