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ACE7331M 数据表(PDF) 1 Page - ACE Technology Co., LTD.

部件名 ACE7331M
功能描述  P-Channel 30-V MOSFET
PDF  7 Pages
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制造商  ACE [ACE Technology Co., LTD.]
网页  http://www.ace-ele.com
标志 ACE - ACE Technology Co., LTD.

ACE7331M 数据表(HTML) 1 Page - ACE Technology Co., LTD.

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ACE7331M
P-Channel 30-V MOSFET
VER 1.1
1
Description
The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low r
DS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper lead frame DFN3x3-8L saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous
Drain Current
a
TA=25℃
ID
-13.4
A
TA=70℃
-11.0
Pulsed Drain Current
b
IDM
±50
A
Continuous Source Current (Diode Conduction)
a
IS
-2.1
A
Power Dissipation
a
TA=25℃
PD
3.5
W
TA=70℃
2.0
Operating temperature / storage temperature
TJ/TSTG -55~150
℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Units
Maximum Junction-to-Ambient
a
t <= 10 sec
RθJA
35
°C/W
Steady State
81
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature


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