Linear Integrated Systems

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Doc 201151 05/14/2014 Rev#A30 ECN# LSK489

FEATURES

ULTRA LOW NOISE

√Hz

LOW INPUT CAPACITANCE

Ciss = 4pF

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to +150°C

Junction Operating Temperature

-55 to +150°C

Maximum Power Dissipation, TA = 25°C

300mW

500mW

Maximum Currents

Gate Forward Current

Maximum Voltages

Gate to Source

Gate to Drain

Features



Reduced Noise due

to process improvement



Monolithic Design



High slew rate



Low offset/drift voltage



Low gate leakage lgss & lg



High CMRR 102 dB

Benefits



Tight differential voltage match vs.

current



Improved op amp speed settling time

accuracy



Minimum Input Error trimming error

voltage



Lower intermodulation distortion

Applications



Wide band differential Amps



High speed temperature

compensated single ended input

amplifier amps



High speed comparators



Impedance Converters

Description

The LSK 489 series of high performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift

over temperature specifications, and is targeted for use in a wide range or precision instrumentation applications. This series has

a wide selection of offset and drift specifications. The SST series SO-8 package provided ease of manufacturing and the

symmetrical pinout prevents improper orientation. The SO-8 package is available with tape and reel options for compatibility with

automatic assembly methods. (See packaging data)

LSK489

LOW NOISE LOW CAPACITANCE

MONOLITHIC DUAL

N-CHANNEL JFET AMPLIFIER

TO-71

TOP VIEW

SOIC-A

SOT-23

TOP VIEW

* For equivalent single version, see LSK189

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