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LSK489 数据表(PDF) 2 Page - Linear Integrated Systems

部件名 LSK489
功能描述  LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
PDF  6 Pages
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制造商  LINEAR [Linear Integrated Systems]
网页  http://www.linearsystems.com
标志 LINEAR - Linear Integrated Systems

LSK489 数据表(HTML) 2 Page - Linear Integrated Systems

  LSK489 Datasheet HTML 1Page - Linear Integrated Systems LSK489 Datasheet HTML 2Page - Linear Integrated Systems LSK489 Datasheet HTML 3Page - Linear Integrated Systems LSK489 Datasheet HTML 4Page - Linear Integrated Systems LSK489 Datasheet HTML 5Page - Linear Integrated Systems LSK489 Datasheet HTML 6Page - Linear Integrated Systems  
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Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201151 05/14/2014 Rev#A30 ECN# LSK489
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
GS2
GS1
V
V
Differential Gate to Source Cutoff
Voltage
20
m
V
VDS = 10V, ID = 1mA
DSS2
DSS1
I
I
Gate to Source Saturation Current Ratio
0.9
1.0
VDS = 10V, VGS = 0V
CMRR
COMMON MODE REJECTION RATIO
-
20 log│∆VGS1-2/∆VDS│
95
102
dB
VDS = 10V to 20V, ID = 200µA
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
en
Noise Voltage
1.8
2.0
nV/
√Hz
VDS = 15V, ID = 2.0mA, f = 1kHz,
NBW = 1Hz
en
Noise Voltage
2.8
3.5
nV/
√Hz
VDS = 15V, ID = 2.0mA, f = 10Hz,
NBW = 1Hz
CISS
Common Source Input Capacitance
4
8
pF
VDS = 15V, ID = 500µA, f = 1MHz
CRSS
Common Source Reverse Transfer
Capacitance
3
pF
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
-60
V
VDS = 0, ID = -1nA
V(BR)G1 - G2
Gate to Gate Breakdown Voltage
±30
±45
V
IG= ±1µA, ID=IS=0 A (Open Circuit)
VGS(OFF)
Gate to Source Pinch-off Voltage
-1.5
-3.5
V
VDS = 15V, ID = 1nA
VGS
Gate to Source Operating Voltage
-0.5
-3.5
V
VDS = 15V, ID = 500µA
IDSS2
Drain to Source Saturation Current
2.5
5
15
mA
VDG = 15V, VGS = 0
IG
Gate Operating Current
-2
-25
pA
VDG = 15V, ID = 200µA
-0.8
-10
nA
TA = 125°C
IGSS
Gate to Source Leakage Current
-100
pA
VDG = -15V, VDS = 0
Gfs
Full Conductance Transconductance
1500
µS
VDG = 15V, VGS = 0, f = 1kHz
Gfs
Transconductance
1000
1500
µS
VDG = 15V, ID = 500µA
GOS
Full Output Conductance
40
µS
VDG = 15V, VGS = 0
GOS
Output Conductance
1.8
2.7
µS
VDG = 15V, ID = 200µA
NF
Noise Figure
0.5
dB
VDS = 15V, VGS = 0, RG
= 10MΩ,
f = 100Hz, NBW = 6Hz



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