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LP5520 数据表(PDF) 34 Page - Texas Instruments |
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LP5520 数据表(HTML) 34 Page - Texas Instruments |
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34 / 46 page ![]() 34 LP5520 SNVS440B – MAY 2007 – REVISED MARCH 2016 www.ti.com Product Folder Links: LP5520 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Typical Applications (continued) 8.2.1.1 Design Requirements For typical RGB backlight LED-driver I2C-bus applications, use the parameters listed in Table 14. Table 14. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 2.9 V to 5.5 V Maximum output voltage 20 V LED configuration 3 strings with 6 LEDs in series LED current Maximum 60 mA per string Brightness control I2C Operation mode Automatic/normal Input capacitor 10 µF, 6.3 V Output capacitors 2 × 4.7 µF, 25 V Inductor 4.7 µH Temperature sensor LM20 8.2.1.2 Detailed Design Procedure 8.2.1.2.1 Recommended External Components 8.2.1.2.1.1 Output Capacitor: COUT The output capacitor COUT directly affects the magnitude of the output ripple voltage. In general, the higher the value of COUT, the lower the output ripple magnitude. Multilayer ceramic capacitors with low ESR are the best choice. Capacitor voltage rating must be sufficient; TI recommends 25 V or greater. Examples of suitable capacitors are: TDK C3216X5R1E475K, Panasonic ECJ3YB1E475K, and Panasonic ECJ4YB1E475K. Some ceramic capacitors, especially those in small packages, exhibit a strong capacitance reduction with the increased applied voltage (DC bias effect). The capacitance value can fall below half of the nominal capacitance. Output capacitance that is too low can make the boost converter unstable. Output capacitor value reduction due to DC bias must be less than 70% at 20 V (minimum 3 µF of real capacitance remaining). 8.2.1.2.1.2 Input Capacitor: CIN The input capacitor CIN directly affects the magnitude of the input ripple voltage and to a lesser degree the VOUT ripple. A higher value CIN gives a lower VIN ripple. 8.2.1.2.1.3 Output Diode: DOUT A schottky diode must be used for the output diode. To maintain high efficiency the average current rating of the Schottky diode must be greater than the peak inductor current (1 A). Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse breakdown voltage of the schottky diode significantly larger (approximately 30 V) than the output voltage. Do not use ordinary rectifier diodes, because slow switching speeds and long recovery times cause the efficiency and the load regulation to suffer. A schottky diode with low parasitic capacitance helps in reducing EMI noise. Examples of suitable diodes are Central Semiconductor CMMSH1-40 and Infineon BAS52-02V. 8.2.1.2.1.4 EMI Filter Components: CSW, RSW, LSW And CHF EMI filter (RSW, CSW and LSW ) on the SW pin may be needed to slow down the fast switching edges and reduce ringing. These components must be as near as possible to the SW pin to ensure reliable operation. High frequency capacitor (CSW) in the boost output helps in suppressing the high frequency noise from the switcher. 50V or greater voltage rating is recommended for the capacitors. The ferrite bead DC resistance must be less than 0.1 Ω and current rating 1 A or above. The impedance at 100 MHz must be from 30 Ω to 300 Ω. Examples of suitable types are TDK MPZ1608S101A and Taiyo-Yuden FBMH 1608HM600-T. |
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