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SWCS049F 数据表(PDF) 11 Page - Texas Instruments

部件名 SWCS049F
功能描述  Integrated Power Management Unit Top Specification
PDF  119 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

SWCS049F 数据表(HTML) 11 Page - Texas Instruments

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TPS659110, TPS659112, TPS659113
TPS659114, TPS659118, TPS6591133
www.ti.com
SWCS049Q – JUNE 2010 – REVISED MARCH 2016
Submit Documentation Feedback
Product Folder Links: TPS659110 TPS659112 TPS659113 TPS659114 TPS659118 TPS6591133
Specifications
Copyright © 2010–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
I/O supplied from VRTC, but can be driven from VCC7 or to VCC7 voltage level.
(3)
Input supplied from VRTC, but can be driven from VCC7 voltage level.
5
Specifications
5.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Voltage range on
pins or balls
VCC1, VCC2, VCCIO, VCC3, VCC4, VCC5, VCC7, VBACKUP,
V5IN, TRIP
–0.3
7
V
VCC6
–0.3
3.6
VDDIO
–0.3
3.6
VBST
–0.3
37
SW
–5
30
SW1, SW2, SWIO
–0.3
7
VFB1, VFB2, VFBIO
–0.3
3.6
VOUT, VFB
–0.3
7
OSC32KIN, OSC32KOUT, BOOT1
–0.3
VRTCMAX + 0.3
SDA_SDI, SCL_SCK, EN2, EN1, SLEEP, INT1, CLK32KOUT,
NRESPWRON
–0.3
VDDIOMAX + 0.3
PWRON
–0.3
7
PWRHOLD, GPIO0
–0.3
7
Voltage range on
balls
GPIO1, GPIO2, GPIO3, GPIO4, GPIO5, GPIO6, GPIO7, GPIO8(2)
–0.3
7
V
HDRST
–0.3
7
NRESPWRON2(2)
–0.3
7
PWRDN(3)
–0.3
7
VCCS
–0.3
7
Peak output current on all other terminals than power resources
–5.0
5.0
mA
Functional junction temperature
–45
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 statues that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP155 statues that 250-V HBM allows safe manufacturing with a standard ESD control process.
5.2
ESD Ratings
VALUE
UNIT
VESD
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1)
±2000
V
Charged device model (CDM), per JESD22-C101(2)
All pins
±500



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