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Visit www.macom.com for additional data sheets and product information.

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or

information contained herein without notice.

SPST Reflective AlGaAs PIN Diode Switch

RoHS Compliant

M/A-COM Products

Rev. V3

MA4AGSW1

ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

MA4AGSW1 Schematic with 2-18 GHz Bias Network

MA4AGSW1

39 pF

DC Bias

22 nH

J2

J1

22 pF

22 pF

Operation of the MA4AGSW1 Switch

The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1

SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the

diode bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The

backside area of the die is the RF and DC return ground plane. The bias network design should yield >30 dB

RF to DC isolation.

Best insertion loss, P1dB, IP3, and switching speed are achieved by applying a minimum value of | -2V | at

the D.C. bias node. This may be achieved using a standard, 5V, TTL controlled, PIN diode driver.

Backside of chip is

DC and RF GND