• North America Tel: 800.366.2266 / Fax: 978.366.2266

SPST Reflective AlGaAs PIN Diode Switch

RoHS Compliant

M/A-COM Products

MA4AGSW1

ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

FEATURES

anode technology.

DESCRIPTION

M/A-COM Tech’s MA4AGSW1 is an Aluminum-

Gallium-Arsenide, single pole, single throw (SPST),

PIN diode switch. The switch features enhanced Al-

GaAs anodes which are formed using M/A-COM

Tech’s patented hetero-junction technology. This

technology produces a switch with less loss than

conventional AlGaAs processes. As much as a 0.3

dB reduction in insertion loss can be realized at

50GHz. The fabrication process is designed for high

device uniformity and extremely low parasitics. The

diodes themselves exhibit low series resistance, low

capacitance, and fast switching speed. They are fully

passivated with silicon nitride and have an additional

polymer layer for scratch protection. The protective

coating prevents damage to the diode junction and

anode air-bridges during handling and assembly. Off

chip bias circuitry is required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes makes this switch

ideal for fast switching, high frequency, multi-throw

switch designs. These versatile AlGaAs PIN

switches can be used in a variety of microwave

applications such as switching arrays for radar

systems, radiometers, test equipment and other

multi-assembly components.

Yellow areas indicate bond pads

J1

J2

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+30dBm CW

Breakdown Voltage

25V

Bias Current

± 25mA

Assembly Temperature

+300°C < 10 sec

Junction Temperature

+175°C