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TPD7104F 数据表(PDF) 5 Page - Toshiba Semiconductor |
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TPD7104F 数据表(HTML) 5 Page - Toshiba Semiconductor |
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5 / 13 page ![]() TPD7104F 2014-10-8 5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Remarks Power supply voltage DC VDD(1) -0.3 to 24 V - Pulse VDD(2) 40 V t=300ms single pulse Input voltage VIN -0.3 to 6 V - Output voltage VOUT -0.3 to internally limited V - Output source current IOUT(-) Internal capacity mA Source current Output sink current IOUT(+) 5 mA Sink current IS pin voltage VIS -0.3 to 6 V - Diagnosis output voltage VDIAG -0.3 to 6 V - Diagnosis pin current IDIAG 5 mA - Power dissipation (Note1-a) PD(1) 0.7 W - Power dissipation (Note1-b) PD(2) 0.35 W - Operateing temperature Topr -40 to 125 °C - Junction temperature Tj 150 °C - Strage temerature Tstg -55 to 150 °C - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristics Symbol Rating unit Thermal resistance, junction to ambient Rth (j–a) 178.6(Note 1-a) °C / W 357.2(Note 1-b) Note 1: (Note 1-a) Glass epoxy board (Note 1-b) Glass epoxy board Glass epoxy board Material: FR-4 25.4mm×25.4mm×0.8mm Glass epoxy board Material: FR-4 25.4mm×25.4mm×0.8mm |
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