TPD7104F

2014-10-8

1

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD7104F

1 channel High-Side N channel Power MOSFET Gate Driver

TPD7104F is a 1channel high-side N channel power MOSFET gate driver.

This IC contains a charge pump circuit, allowing easy configuration of a

high-side switch for large-current applications.

Features



Charge pump circuit is built in



Over current protection circuit is built in



Housed in the PS-8 package and supplied in embossed carrier tape

Pin Assignment (top view)

Marking

Note: That because of its MOS structure, this product is sensitive to static electricity

Start of commercial production

2014-9

SON8-P-0303-0.65S

Weight: 0.017 g (typ.)

Lot No.

7104F

Note: ● on the lower left of the marking indicates Pin 1

*Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

Part No.

(or abbreviation code)

2 IS

3 OUT

4 GND

7 DIAG

6 IN

5 GND

Note: 4pin and 5pin should short-circuit externally.