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RFPD3580 数据表(PDF) 1 Page - RF Micro Devices |
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RFPD3580 数据表(HTML) 1 Page - RF Micro Devices |
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1 / 8 page ![]() Revision DS20160304 - 1 of 8 - Disclaimer: Subject to change without notice © 2016RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com RFMD + TriQuint = Qorvo RFPD3580 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz The RFPD3580 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die and operates from 45MHz to 1218MHz. It provides extremely high output up to 76.8dBmV composite power or 67dBmV virtual level. DC current as well as supply voltage of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Functional Block Diagram Ordering Information RFPD3580 Box with 50 pieces Package: SOT-115J Features ■ Extremely High Output Capability ■ Excellent Linearity ■ Superior Return Loss Performance ■ Optimal Reliability ■ Unconditionally Stable Under All Terminations ■ 22.5dB Min. Gain at 1218MHz ■ 550mA Max. ■ Devices works at V+ between 24V and 34V Applications ■ 45MHz to 1218MHz CATV Amplifier Systems ■ DOCSIS 3.1 Compliant INPUT OUTPUT V+ Current setting RFPD3580 |
类似零件编号 - RFPD3580 |
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类似说明 - RFPD3580 |
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