BSP30 datasheet(1/2 Pages) DIOTEC

部件名	BSP30

功能描述	Surface mount Si-Epitaxial PlanarTransistors

PDF	2 Pages

Scroll/Zoom	100%

制造商	DIOTEC [Diotec Semiconductor]

网页	http://www.diotec.com

标志

1 / 2 page

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

2) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2

01.11.2003

4

3

2

1

3

±0.1

6.5

±0.2

0.7

3.25

2.3

1.65

BSP 30 ... BSP 33

Switching Transistors

PNP

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

PNP

Power dissipation – Verlustleistung

1.3 W

Plastic case

SOT-223

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2, 4 = C

3 = E

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BSP 30

BSP 31

BSP 32

BSP 33

Collector-Emitter-voltage

B open

- V

CE0

60 V

80 V

Collector-Base-voltage

E open

- V

CB0

70 V

90 V

Emitter-Base-voltage

C open

- V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

1.3 W 1)

Collector current – Kollektorstrom (dc)

- I

C

1 A

Peak Collector current – Koll.-Spitzenstrom

- I

CM

2 A

Peak Base current – Basis-Spitzenstrom

- I

BM

200 mA

Junction temp. – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I

E = 0, - VCB = 60 V

- I

CB0

–

100 nA

I

E = 0, - VCB = 60 V, Tj = 150

/C- I

CB0

–

50

:A

Emitter-Base cutoff current – Emitterreststrom

I

C = 0, - VEB = 5 V

- I

EB0

–

100 nA

Collector saturation volt. – Kollektor-Sättigungsspg. 2)

- I

C = 150 mA, - IB = 15 mA

- V

CEsat

–

250 mV

- I

C = 500 mA, - IB = 50 mA

- V

CEsat

–

500 mV

类似零件编号 - BSP30

制造商	部件名	数据表	功能描述
STMicroelectronics	BSP30	73Kb / 4P	MEDIUM POWER AMPLIFIER Oct-1995
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