BSP30 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

Switching Transistors

BSP 30 ... BSP 33

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

- I

C = 150 mA, - IB = 15 mA

- V

BEsat

–

1 V

- I

C = 500 mA, - IB = 50 mA

- V

BEsat

–

1.2 V

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- V

CE = 5 V, - IC = 100

BSP 30

BSP 32

–

- V

CE = 5 V, - IC = 100 mA

–

120

- V

CE = 5 V, - IC = 500 mA

–

- V

CE = 5 V, - IC = 100

BSP 31

BSP 33

–

- V

CE = 5 V, - IC = 100 mA

100

–

300

- V

CE = 5 V, - IC = 500 mA

–

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

20 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

EB = 0.5 V, IC = ic = 0, f = 1 MHz

EB0

–

120 pF

–

Switching times – Schaltzeiten

turn-on time

- I

Con = 100 mA,

- I

Bon = 5 mA, IBoff = 5 mA

–

500 ns

turn-off time

off

–

600 ns

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

thA

93 K/W 2)

junction to soldering point – Sperrschicht zu Lötpad

thS

12 K/W

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BSP 40, BSP 41, BSP 42, BSP 43

BSP30 数据表(PDF) 2 Page - Diotec Semiconductor

BSP30 数据表(HTML) 2 Page - Diotec Semiconductor

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BSP30 数据表(PDF) 2 Page - Diotec Semiconductor

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