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ADM1270ACPZ-R2 数据表(PDF) 17 Page - Analog Devices |
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ADM1270ACPZ-R2 数据表(HTML) 17 Page - Analog Devices |
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17 / 21 page ![]() Data Sheet ADM1270 Rev. A | Page 17 of 21 The default value is 50 mV and is achieved by connecting the ISET pin directly to the VCAP pin. This circuit configuration configures the device to use an internal 2 V reference, which results in 50 mV at the sense inputs (see Figure 38). 40× + – CURRENT LIMIT VCC/SENSE+ SENSE– GATE GND LDO VCAP RSENSE Q1 4V TO 60V + – REF SELECT ISET FLB 2V CURRENT- LIMIT CONTROL Figure 38. Fixed 50 mV Current Sense Limit To program the sense voltage from 12.5 mV to 62.5 mV, an external resistor divider sets the reference voltage on the ISET pin (see Figure 39). 40× + – CURRENT LIMIT VCC/SENSE+ SENSE– GATE GND LDO VCAP RSENSE Q1 4V TO 60V + – REF SELECT ISET FLB 2V CURRENT- LIMIT CONTROL Figure 39. Adjustable 12.5 mV to 62.5 mV Current Sense Limit The VCAP pin has a 3.6 V internally generated voltage that can set a voltage at the ISET pin. Assuming that VISET equals the voltage on the ISET pin, select the resistor divider values to set the ISET voltage as follows: VISET = VSENSE × 40 where VSENSE is the current sense voltage limit. The VCAP rail also can be used as the pull-up supply for setting other pins. To guarantee that VCAP meets its accuracy specifications, do not apply a load to the VCAP pin greater than 100 µA. FOLDBACK Foldback is a method to actively reduce the current limit as the voltage drop across the FET increases. This technique keeps the power dissipation in the FET at a minimum during power-up, overcurrent, or short-circuit events. It also reduces the need to oversize the FET to accommodate worst-case conditions, resulting in board size and cost savings. Assuming that the supply voltage remains constant and within tolerance, the ADM1270 detects the voltage drop across the FET by sensing output voltage through a resistor divider. The device, therefore, relies on the principle that the drain of the FET is at the maximum expected supply voltage, and that the magnitude of the output voltage is relative to that of the VDS of the FET. Using a resistor divider from the output voltage to the FLB pin, the relationship from VOUT, and thus VDS, to VFLB can be derived. Design the resistor divider to result in a voltage equal to VISET/2 when VOUT falls below the desired level. This voltage must be well below the working tolerance of the supply rail. As VOUT continues to drop, the current-limit reference follows VFLB because it is now the lowest voltage input to the current-limit reference selector block, resulting in a reduction of the current limit and, therefore, the regulated load current. To prevent the current from decreasing to zero, a clamp activates when VFLB reaches 200 mV. The current limit cannot drop below this level. To ensure that the SOA characteristics of a particular FET are not violated, the minimum current for this clamp varies from design to design. However, the current-limit reference fixes this clamp at 200 mV, which equals 10 mV across the sense resistor. Therefore, the main ISET voltage can be adjusted to adjust the clamp to the required percentage current reduction. For example, if VISET equals 1.6 V, set the clamp at 25% of the maximum current. TIMER The TIMER pin handles the timing function with an external capacitor, CTIMER. The two TIMER pin comparator thresholds are VTIMERL (0.1 V) and VTIMERH (2.0 V). There are two timing current sources as well: a 20 µA pull-up current and a 1 µA pull-down current. These current and voltage levels, in combination with the user chosen value of CTIMER, determine the fault current-limit time and the on-time of the hot swap retry duty cycle. The TIMER pin capacitor value is determined using the following equation: CTIMER = (tON × 20 µA)/VTIMERH where: tON is the time that the FET is allowed to spend in regulation at the current limit. VTIMERH is the TIMER high threshold. The choice of FET is based on matching this time with the SOA characteristics of the FET. Foldback can also be used to simplify the selection. |
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